Work Package 5 IC technologies - Leader: M.Campbell Deputy: F.Faccio - CERN Indico

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Work Package 5 IC technologies - Leader: M.Campbell Deputy: F.Faccio - CERN Indico
Work Package 5
IC technologies
   Leader: M.Campbell
    Deputy: F.Faccio
Work Package 5 IC technologies - Leader: M.Campbell Deputy: F.Faccio - CERN Indico
Overview of Work Package 5

Ac#vity 1                                             Ac#vity 2
CMOS and assembly Technologies                        Design and IPs

1. CMOS Technologies                                  1. Low-voltage and low-power design
Leader: K.Kloukinas                                   Leader: R. Ballabriga Sune

Radia%on effects                                       Build-up and share experience in ASIC design
 CAD tools with emphasis on:                          Design/characterisa%on of building blocks:
 - reference design workflows                          - Voltage reference generators
 - mixed-signal design of complex chips (SOC)         - Low-noise amplifiers
 - collabora%ve tools                                 - Conversion: ADC, DAC
Enablers (DKit, FrameContract, NDA, training)         - Timing circuits: PLLs, DLLs, TDC
Custom digital logic compilers                        - Line drivers/receivers

                                                       2. Power distribu#on
                                                      Leader: S.Michelis
CMOS-related Assembly Technologies
                                                      High efficiency DCDC converter (Vin >25V)
 Through-Silicon Vias (TSV)                           IP blocks for on-chip power management:
 CMOS wafer stacking                                     converters and regulators
Recent history of CMOS processes used in HEP

#me

  2025                                                  28nm CMOS?
                                                        22nm FDSOI?
                                                        14nm FinFET?
  2020

  2014
                                              65nm
                                              12 designs (HL-LHC)
  2009                            130nm
                                  26 designs (HL-LHC)

  1998                0.25um
                      >50 designs (LHC)
                       End Of Life 2019

                                      size, complexity, radia#on specs
Activity 1
CMOS Technologies                                                                  Environment

                                                                       Radia#on hardness design prac#ces

                                                                       Accessibility
                                                                       Frame contract, NDAs, framework
         Selec%on Criteria
                                                                       for collabora%ve design
      Radia#on tolerance                                               CAD Enablers
      Easy access                                                      Mixed-Signal Design Kit, Reference
                                                                       Design Workflow
      Support from manufacturer
                                                  MVP
      Long-term availability                                           Elementary macro-blocks
      Cost                                                             IO pads, ESD structures,
      …..                                                              Digital Logic Compilers

                                                                       Training and knowledge build-up
                                                                       Specialised courses, Blogs and Web
                                                                       interfaces, Sharing of experience

                                                                       IP blocks (WP2.1)
                                                                       Complex macro-blocks characterised
                                                                       on silicon and ready for use

* I adopt here the defini%on of “MVP” for a technology introduced by M.Garcia Sciveres (LBL) in a presenta%on
about the development of the FEI4 chip for the ATLAS pixel detector
Work-plan for Activity 1 and 2.1

                                 2020         2021      2022         2023            2024         2025

                                   Radia%on tests
                                   Global evalua%on
                                                      MVP Commercial/legal framework
Ac#vity 1
                                                            Elementary macro blocks
CMOS Technologies
                                                              CAD environment
                                                                                            Training

                                                          Design & prototype
Ac#vity 2
                                                                       Qualifica%on
Design and IP blocks
2.1 Low-voltage and low-power design                                                   Move to produc%on
Activity 2.2: Power distribution
High efficiency DCDC converter (Vin >25V)

                                          Existing today

                                             bPOL2V5/rPOL2V5

                                                                                optoelectronics

                          FEAST2/bPOL12V
                                                                       1.2V
                                                            Stage2                  analog

48V                      12V                  2.5V
        Stage 0                    Stage1                              0.8V
                                                            Stage2                  digital

                                                   LinPOL
                                                                     1.5-3.3V
                                                            Linear               slow control

      >25V                                  2.5V
                               Stage 1

                                                                                                  6
One very ahrac%ve possibility: Switched Tank Converter (STC) using GaN power transistors

 Divide-by-4 STC from 48V input, 50-100W power, efficiency >98%

                                 In HS

                                                                In HS

                                                                                             In HS
                                 In LS

                                                                In LS

                                                                                             In LS
                                                                                                                      Control
                                 +boots
                                                                                                                       ASIC

                                                                +boots

                                                                                             +boots
                                 Logic

                                                                Logic

                                                                                             Logic
                                 trap

                                                                trap

                                                                                             trap
                                                                                                                          EPC2151 – 80 V, 10 A Integrated DrGaN Half-Bridge
                     shifter

                                                      shifter

                                                                                   shifter
                                                                                                                          Power Stage - PRELIMINARY
                     Level

                                                      Level

                                                                                   Level
                                                                                                                          Functional Block Diagram
                                             driver

                                                                          driver

                                                                                                      driver
                       driver

                                                       driver

                                                                                    driver
          Vin=48V                                                                                              Vout=12V
                     driver

                                                       driver

                                                                                    driver
                                          driver

                                                                         driver

                                                                                                      driver
                                                                                                                     New fully GaN product with power
                    shifter

                                                      shifter

                                                                                   shifter
                    Level

                                                      Level

                                                                                   Level

                                                                                                                     transistors,
                                                                                                                       Die Photo  drivers and level shijer
                                +boots

                                                                +boots

                                                                                             +boots
                                Logic

                                                                Logic

                                                                                             Logic
                                trap

                                                                trap

                                                                                             trap
                                In HS

                                                                In HS

                                                                                             In HS
                                In LS

                                                                In LS

                                                                                             In LS

                                                                                                                          3.9 mm x 2.6 mm x 0.8 mm

  GaN power devices can be used also in other topologies, where they open the path for high-efficiency and
  large conversion ra%o buck converters (25V->2.5V, for instance)
                                                                                                                          Subject to Change without Notice www.epc-co.com   COPYRIGHT 2019   Page 6
Work-plan for Activity 2.2

                        2020          2021           2022           2023       2024          2025

                        Radia%on test of
Ac#vity 2               GaN component
Design and IP blocks
                               Prototype DCDC
2.2 Power distribu%on
                               with simple control
                                       Prototype DCDC with
                                       integrated control (ASIC)
                                                                             Design and qualifica%on
                         Radia%on test of silicon (CMOS)
                                                                             of complete prototype(s)
                         High-V technologies                        Review
                                        Prototype DCDC with
                                        integrated control (ASIC)
Present structure of Work Package 5

Ac#vity 1                                           Ac#vity 2
CMOS Technologies                                   Design and IPs

1. CMOS Technologies                                1. Low-voltage and low-power design
Leader: K.Kloukinas                                 Leader: R. Ballabriga Sune

Radia%on effects                                     Build-up and share experience in ASIC design
 CAD tools with emphasis on:                        Design/characterisa%on of building blocks:
 - reference design workflows                        - Voltage reference generators
 - mixed-signal design of complex chips (SOC)       - Low-noise amplifiers
 - collabora%ve tools                               - Conversion: ADC, DAC
Enablers (DKit, FrameContract, NDA, training)       - Timing circuits: PLLs, DLLs, TDC
Custom digital logic compilers                      - Line drivers/receivers

                                                     2. Power distribu#on
                                                    Leader: S.Michelis
                                                    High efficiency DCDC converter (Vin >25V)
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