THE FUTURE OF CHARGING IS GANFAST! - EDWIN (李文辉) LEE, DIRECTOR OF SALES, NAVITAS SEMICONDUCTOR
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The Future of Charging is GaNFast!
December 18th, 2020
Edwin (李文辉) LEE, Director of Sales, Navitas Semiconductor
edwin.lee@navitassemi.com
Navitas Semiconductor Ltd.
• Navitas:
• Latin for “Energy”
• Founded January 2014
• Proven management, 75+ employees
• Strong financial investors ($1B+ managed capital)
• Global Expansion
• HQ: Dublin, Ireland
• Locations: Hangzhou, Hsinchu Los Angeles, Manila, Shanghai,
Shenzhen, Suwon, Taipei & Tokyo
• World’s first & only GaN power IC company
2
Power GaN Technologies
10…30V
GaN Power IC
D GaN Power (FET),
G
Drive, Control, Protection
S1
S2
GaN Discrete
Need special gate driver to
drive sensitive GaN input
Co-pack
dMode FET
(normally on) Si controller/driver
Need extra Si FET
in ‘cascode’ configuration + Si FET cascode
+ GaN dMode FET
3
World’s First GaNFast™ Power ICs
Fastest, most efficient First & Fastest Integrated World’s First
GaN Power FETs GaN Gate Driver
with Control & Protection Power ICs
>20x faster than silicon >3x faster than any other gate driver
>5x faster than cascoded GaN Proprietary design
Proprietary design 120+ patents granted/applied
Up to 40 MHz switching, 5x higher density & 20% lower system cost
4
GaNFast Power ICs: Single, Half-Bridge
10…30V
• Monolithic integration, 650V/800V, 2MHz
• GaN Power FET(s) + Driver + Control + Protection
Single
GaN Power IC • Features: on-board regulators, hysteretic input, level-shift,
NV61xx
bootstrap, dV/dt control, UVLO, shoot-through & ESD protection
• “Digital In, Power Out”
Half-Bridge
GaN Power IC
NV62xx
6x8 5x6
mm mm
QFN
2MHz, 0-600V Half-Bridge
5
• 120+ patents
• AllGaN™ PDK
• Integrated gate drive
• Half-bridge
• Level-shifting
• Autonomous
protection
• …and more
• Low-inductance
packaging
• High-frequency
systems
• Application
use cases
6
High Volume, High Quality
July 2020
7
Proprietary Reliability Methods
500kHz, 0-500V
Proven Quality and Reliability
>9M Shipped
0 (zero) Field Failures
Smartphones Win With GaN
210 6,000 ?
Screen Size and Battery Capacity 120 OEM Charger Power
200 Incl. Huawei, Xiaomi, OPPO, OnePlus, RealMe, Samsung, Apple, Google
190 5,500
In-Box Accessory Platform Announcement
180 ? ?
5,000 100
170
160 4,500
150
140 4,000 80
130
Charging Power (W)
Battery Size (mAhr)
120 3,500
Screen Size (cm2)
110
3,000 60
Si
100
90 2,500 Si
80 Si
70 2,000 40
60
50 1,500 Si
40 Si
20 Si
1,000
30
20 500
10
0
0 0
Year
Source: Navitas, to November 2020 10Notebook Fast Charging
Lipstick 65W C
63 cc, 93 g, 1 W/cc
Lipstick Pro 65W C+A
76 cc, 106 g, 0.85 W/cc
11Notebook Fast Charging
Power Adapter Plus (PA901) ProArt StudioBook One
90W captive USB-C + 10W A 300W 48V
188 cc, 375 g, 0.53 W/cc 237 cc, 600 g, 1.27 W/cc
12Mobile Fast Charging
“Using gallium nitride devices to drive transformers to very high
frequencies has been the dream of all technical workers for many years”
50W Mini SuperVOOC “Cookie” Charger 110W Platform 65W SuperDart
13Mobile Fast Charging
Legion Gaming Phone
90W 2C
65W C
53 cc Mi 10, 10 Pro
Xiaomi CEO: “How tiny is this GaN charger?”
14Aftermarket GaNFast
• 8 chargers from 27W to 100W 2C+2A
• Proprietary Omnia GaNFast power IC
Omnia 61W C Omnia 100W 2C+2A
61 cc, 92 g, 1 W/cc 160 cc, 223 g, 0.62 W/cc
15Aftermarket GaNFast
65W C+A 61W C
20W C
16World’s Smallest Multi-Port 30W-200W
3x smaller, lighter and lower cost than individual chargers
High-frequency ACF / QR
Toroidal or planar transformers
200W 2C+2A
203 cc, 220 g
120W 2C+A
154 cc, 216 g
100W 3C+A
149 cc, 220 g
Omnia 90W 2C+A
131 cc. 190 g
Pro 65W C+A High-frequency CrCM boost PFC + ACF / QR
76 cc, 106 g Toroidal or planar transformers
30W C+A
67 cc, 82 g
Images to scale 1750W Mini “Cookie”
• Pulsed-Active Clamp Flyback (P-ACF) soft-switching 400 kHz
• Very high-frequency shrinks magnetics, etc. and eliminates electrolytic bulk caps
• 2x NV6115 GaNFast power ICs, UCC28782 controller and planar transformer
• Planar transformer 60% thinner than traditional
• No electrolytic caps saves 40% PCB area
• Size: 82 x 39 x 10.5 mm = 34 cc (cased), ~62 x 35 x 8 mm = ~17 cc (PCBA)
• Efficiency DoE VI: 92% @ full load, 230 VAC
18Legion 90W 2C
• High-frequency topology shrinks magnetics, EMI filter and output caps
• CrCM Boost PFC (150k-200 kHz) with NV6127 GaNFast power IC and NCP1622 controller
• HFQR DC-DC (130-160 kHz) with NV6125 and NCP1342
• Size: 66 x 63 x 28 mm = 116 cc (cased) = 0.8 W/cc
• 58 x 59.6 x 22 mm = 76 cc (PCBA) = 1.2 W/cc
• Efficiency DoE VI (90W, Dual Output):
• 91.8% @ full load, 230 VAC, 91.6% @ 130 VAC
HFQR
Transformer 2x USB-C
PFC Power IC NV6127 Isolators
PQ22.5 Bulk
Output Capacitor
Capacitors
SR
FETs
PFC
AC Boost
EMI
Bridges Diodes
PFC Filter
Inductor
HFQR Power IC PQ2017
NV6125
Control ICs NCP1622, NCP1342 on daughtercard
1920
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