De la recherche fondamentale à la Start-Up - Etienne GHEERAERT CNRS,University of Grenoble - Alps and University of Tsukuba
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De la recherche fondamentale à la Start-Up
Etienne GHEERAERT
CNRS,University of Grenoble - Alps and University of Tsukuba
1
JEPHY 2018 Avignon
Contexte
LEPES: Laboratoire Propre de Recherche Fondamentale en
Physique du Solide
CNRS MPB (ancêtre INP): Mathématique et Physique de Base
Ion Solomon (1990):
« Si vous ne savez pas pour quelle application vous
travaillez, alors vous travaillez à 100% pour les japonais
et les américains, car eux l’application ils vont la
trouver . »
2
Contexte
NIMS (Japon): Institut de Recherche sur la Science des
Matériaux
Impact du terme « Fondamental »
Innovation au coeur de la recherche
Des outils pour traverser la « vallée de la mort »
3
Contexte: NEEL group
Wide Bandgap Semiconductor Group
Understand Control Innovative devices
Impurity centres
Epitaxial Growth Electronic Bio-related
Diamond Heterostructures
Transport in semiconducting In-situ monitoring Power electronics
Membranes
nanowires Nano-fabrication Nanowire LED
Bio sensors
Superconducting semiconductors Impurity incorporation Single photon source
Photospintronics Oxide gate insulators
Superconductor/Insulator Transition
ANR Transport in ZnO (Coll. Leti) FUI Power Schottky (Alstom)
ANR Transport in GaN (Coll. Leti) ANR JC D. Eon
LANEF PhD (Coll. G2ELab)
LANEF Eqt CARAPACE LANEF PhD (Coll. INAC)
4
Context: Diamond diodes
Schottky diodes at NEEL
Breakdown voltage: Vbreak>1000 V on
1.3µm
On resistance : Ron = 52 Ω (@300 K)
Diode surface : S = 7.85 10-5 cm2.
RonS = 4 mΩ.cm²
A. Traore et al APL 2014 5
What material for power electronics ?
Property Symbol Si 4H-SiC GaN -Ga2 O3 Diamond
Bandgap EG [eV] 1.1 3.23 3.45 4.5 5.45
Sat. drift velocity vS [107 cm/s] 1.0 2.0 2.2 - 1.1
Electron mobility µn [cm2 /V.s] 1500 1000 1250 300 1000
Hole mobility µp [cm2 /V.s] 480 100 200 - 2000
Breakdown field Em [MV/cm] 0.3 3 2 8 10
Dielectric constant ✏r 11.8 9.8 9 10 5.5
Thermal conduct. [W/cm.K] 1.5 5 1.5 0.11 22
BFM (absolute) [MW/cm2] 42 2⇥104 8⇥103 1.4⇥105 9.7⇥105
BFM (relative) [Si=1] 1 550 190 3200 23000
Table 1: Properties of main semiconductors for power electronics and the corresponding Baliga 3
BF M = µ✏ E
r m
Figure of Merit (BFM). For each material the most favorable carrier mobility (µn or µp ) is
used to calculate the figure of merit
required to get a 1 kV breakdown voltage, and this leads to a high resistance 6
What material for power electronics ?
1,0E+00
Si CoolMOS
0K
Si 1D limit
30
Si-IGBT Diamond SiC 1D limit
Si
Schottky Diamond 1D limit
Diamond Schottky
1,0E-01 Si-CoolMOS TO
G Si IGBT
C
Si SiC MOSFET
CREE Gen3 SiC-MOS
RonS (Ohm-cm2)
Cree SiC p-GTO
Cree SIC n-IGBT
1,0E-02
0K
30
d
on
SiC
m
3K
IGBT
ia
52
D
d
on
1,0E-03
m
ia
D
SiC-523K
SiC-300K
SiC-MOSFET
1,0E-04
100 1 000 10 000
Breakdown Voltage (V)
Based on H. Umezawa calculations, AIST 7Potential application
(6) Improving fuel efficiency 15
Silicon
SiC
Goal: 10% fuel improvement*
*Japanese JC08 test cycle
Due to the increased efficiency, Toyota is aiming for a
10% improvement in fuel efficiency
Toyota 2014 8What material for power electronics ?
EMICONDUCTOR TECHNOLOGY ROADMAP FOR POWER ELECTRONICS DEVIC
Two possible approaches within the semiconductor technology roadmap for Power Electronic devices:
• Progressive evolution
• Significant improvement (“revolution”)
Diamond
performance
performance
.
rtunities
ent to
diamond
eadily
SiC, GaN
Device
ent.
Device
.
Si
Technology and cost barriers
Executive Summary ©2016 | www.yole.fr | Diamond substrate in power electronic applications - Final report - August 29th, 2016
9European Project
Green Electronics with Diamond Power Devices
4 M€
2015-2019
15 partners
H2020 “Low Carbon Energy”
Coordinator: E. Gheeraert - NEEL
Kick-Off meeting, Grenoble June 2015 10Business model
Diamond
ELS OVERVIEW epitaxy provider
ess model 1: Diamond substrate supplier (epitaxy services)
Diamond
Diamond Diamond Device
device
wafer epitaxy packaging
processing
+diamond
epitaxial layer(s)
Diamond wafer The Company will realize
er(s) purchased from an epitaxial growth on a Diamond device processed and packaged by an external
external supplier purchased wafer and sell company
(Element Six, the “substrate” to a power
Sumitomo Electric…) device maker
ness model 2: Diamond bare die supplier
Diamond
Diamond Diamond Device
device
wafer epitaxy packaging
processing 11DiamFab
❖ Un CDD
❖ 3 enseignants-chercheurs
❖ PI:
❖ Savoir Faire croissance
❖ 3 brevets sur composants
❖ Soutien: SATT, French Tech
❖ Statut: Incubation
❖ Création: Automne 2018
12Conclusion
❖ Ne pas hésiter à discuter vos idées avec le SPV
❖ Breveter c’est facile (avec le SPV)
❖ Une start-up c’est une belle aventure
❖ Notre mission c’est de créer de la connaissance
❖ Notre devoir c’est d’accompagner les opportunités
de valorisation
13Thanks
Post-doc: Permanent:
M. Floren*n D. Eon
P. Thanh Toan J. Pernot
P. Muret
PhD students: H. Umezawa
K. Driche D. Chaussende
C. Masante E. Bustarret
J. Letellier
O. Loto A. Claudel
J. De Vecchy D. Barral
B. Fernandez
MSc/BSc:
C. You
F. Fillol
European Community's Horizon 2020 Programme (H2020/2014-2020)
under grant agreement n° 640947 14You can also read
