Silicon Carbide Power - High performance, ultimate reliability. However tough the environment
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Silicon Carbide Power
High performance, ultimate reliability.
However tough the environment…
Flexible • Innovative • Trusted
02 Silicon Carbide Power
Courtesy of EF
Silicon Carbide Power 03
High Temperature, High Reliability SiC Range
Semelab brings together the unique attributes of Silicon Carbide and the
advanced capability of Semelab packaging technologies to offer unprecedented
performance and reliability. The products below are all designed for high
reliability, high temperature operation. All are available with various levels of
screening and qualification as required.
TT electronics Semelab
TT electronics Semelab manufacture ultra reliable high Our R&D teams have an excellent track record for
performance semiconductor solutions designed to developing imaginative electronic solutions and our
operate in any environment. design engineers have created a wealth of high
performance products. Our manufacturing
We are experts in custom packaging and screening,
divisions have ensured supreme quality and reliability.
servicing focused aerospace, military, RF, audio and
And our sales teams and distribution partners have
industrial markets.
opened international markets to some of the best
At Semelab, we research, design, manufacture and electronics solutions available.
distribute an innovative range of semiconductor
products throughout the world.
Shortform / Datasheets:
Part No. Description Voltage Current Package
SML05SC06D3A Ultra Fast Recovery Power Rectifier 600V 5A DLCC-3
SML010FBDH06 Silicon Carbide Power Schottky Rectifier Diode Bridge 600V 10A TO258-D
SML10SIC06YC Silicon Carbide Schottky Rectifier 600V 10A TO257-AA
SML020DH12 Silicon Carbide Schottky Rectifier 1200V 20A TO258-AA
SML100M12MSF Normally-off Silicon Carbide Power Jfet 1200V 24A TO258-AA
Flexible • Innovative • Trusted
04 Silicon Carbide Power Silicon Carbide Power Schottky Rectifier Diode Bridge SML010FBDH06 Features • 600V, 10A Full Bridge Rectifier Configuration • High Temperature Operation Tj = 200°C • Effective Zero Reverse and Forward Recovery • High Speed Low Loss Switching • High Frequency Operation • High-Reliability Screening Options Available Key Markets • Space • Defence & Civil Aviation • Down-hole Drilling Applications • Motor Drives • UPS • Induction Heating • SMPS
Silicon Carbide Power 05
Absolute Maximum Ratings (Per Die, Tc = 25°C unless otherwise stated)
VRRM Repetitive Peak Reverse Breakdown Voltage 600V
VRSM Surge Peak Reverse Voltage 600V
VDC DC Blocking Voltage 600V
IF(AVG) Average Forward Current 10A
IFSM Non Repetitive Peak Forward Surge Current, tp = 10μs 45A
TJ Junction Temperature Range -55 to +200°C
Tstg Storage Temperature Range -55 to +225°C
Thermal Properties (Per Die)
Symbols Parameters Max. Units
RθJC Thermal Resistance, Junction To Case 2.0 °C/W
Electrical Characteristics (Per Die, Tc = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min. Typ. Max. Units
(1) IF = 10A 1.8 2.2
VF Forward Voltage V
Tc = 175°C 2.0 2.7
VR = VRRM 10 100
IR Reverse Current μA
Tc = 175°C 1000
Dynamic Charactersitics
Symbols Parameters Test Conditions Min. Typ. Max. Units
Total Capacitative IF = 10A VR = 600V
QC 32 nC
Charge di/dt = 500A/μs TJ = 25°C
Mechanical Data Dimensions in mm (Inches)
TO258D (MO-078AA)
PIN 1 - Rectified DC
PIN 2 + AC
PIN 3 N/C
PIN 4 - AC
PIN 5 + Rectified DC
Flexible • Innovative • Trusted
06 Silicon Carbide Power Ultra Fast Recovery Power Rectifier SML05SC06D3A SML05SC06D3B Features • VR(max) = 600V • IF(avg) = 5A • VF(typ) = 1.5V • DLCC3 Hermetic Ceramic Surface Mount Package Designed as a Drop In Replacement for “D-5B”/ ”E-MELF” Package † • No Reverse Recovery • No Forward Recovery • High-Reliability Screening Options Available Applications • Down-Hole High Temperature • Space Level Screened Parts • Aerospace Engines and Nacelles
Silicon Carbide Power 07
Absolute Maximum Ratings (TA = 25°C unless otherwise stated)
VRRM Peak Repetitive Reverse Voltage 600V
VRSM Surge Peak Reverse Voltage 600V
IF(AVG) Average Forward Current 5A
IFRM Repetitive Peak Forward Current 43A
IFMAX Non-Repetitive Peak Forward Current 25A
PD Total Power Dissipation at TA = 25°C TBA
Derate Above TA = 25°C TBA
TJ Junction Temperature Range -55 to +175°C
Tstg Storage Temperature Range -55 to +175°C
Thermal Properties
Symbols Parameters Max. Units
RθJA (PCB)(1) Thermal Resistance, Junction To Ambient, On PCB TBA °C/W
RθJSP Thermal Resistance, Junction To Solder Pads, TSP = 25°C TBA °C/W
Electrical Characteristics (TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min. Typ. Max. Units
(1) IF = 5A Tc = 25°C 1.5 1.8
VF Diode Forward Voltage V
IF = 5A Tc = 175°C 2.0 2.4
VR = 600V Tc = 25°C 50 200
IR Leakage Current μA
VR = 600V Tc = 175°C 100 1000
Dynamic Charactersitics
Symbols Parameters Test Conditions Min. Typ. Max. Units
VR = 600V IF = 5A
QC Total Capacitative Charge 28 nC
di/dt = 500A/μs TJ = 25°C
VR = 0V TJ = 25°C 550
C Junction Capacitance
T(f = 1.0MHz) VR = 200V TJ = 25°C 65 pF
VR = 400V TJ = 25°C 50
Mechanical Data
DLCC3 Variant A (D3A)
PIN 1 Anode
PIN 2 Cathode
DLCC3 Variant B (D3B)
PIN 1 Anode
PIN 2 Cathode
PIN 2 LID Contact to Cathode
Dimensions mm inches
A 7.00 ±0.10 0.275 ±0.004
B 3.75 ±0.10 0.143 ±0.004
C 1.60 ±0.10 0.063 ±0.004
D 1.76 ±0.10 0.069 ±0.004
08 Silicon Carbide Power Silicon Carbide Power Schottky Diode SML10SIC06YC Features • Semelab’s Silicon Carbide (SIC) Schottky diodes exhibit low forward voltage and superb high temperature performance • Suitable for high-frequency hard switching applications, where system efficiency and reliability are paramount • No reverse recovery time due to absence of minority carrier injection Key Markets • Space • Defence & Civil Aviation • Down-hole Drilling Applications • Motor Drives • UPS • Induction Heating • SMPS
Silicon Carbide Power 09
Absolute Maximum Ratings (TJ = 25°C unless otherwise stated)
VR DC Reverse Voltage 600V
VRRM Repetitive Peak Reverse Voltage 600V
IF DC Forward Current (TJ = 175°C) 10A
IFRM Repetitive Peak Forward Current (1) 67A
IFSM Surge Peak Forward Current (2) 250A
PD Total Power Dissipation at 100W
Derate Above 25°C 0.5 W/°C
TJ Junction Temperature Range -55 to +225°C
Tstg Storage Temperature Range -55 to +225°C
Thermal Properties (Per Die)
Symbols Parameters Max. Units
RθJC Thermal Resistance, Junction To Case 2.0 °C/W
Electrical Characteristics (Per Die, Tc = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min. Typ. Max. Units
IF = 10A 1.5 1.8
VF Forward Voltage V
Tc = 175°C 2.0 2.4
VR = 600V 10 50
IR Reverse Current μA
TJ = 175°C 20 200
Dynamic Charactersitics
Symbols Parameters Test Conditions Min. Typ. Max. Units
VR = 600V IF = 10A
QC Total Capacitative Charge 25 nC
δi/δt = 500A/μs
VR = 1V f = 1MHz 480
C Total Capacitance VR = 200V f = 1MHz 50 pF
VR = 400V f = 1MHz 42
Mechanical Data Dimensions in mm (Inches)
TO-257AA
PIN 1 Anode 1
PIN 2 Case / Common Cathode
PIN 3 Anode 2
Flexible • Innovative • Trusted
10 Silicon Carbide Power Silicon Carbide Power Schottky Rectifier Diode SML020DH12 Features • 1200V, 20A (2x10A) Rectifier Diodes • High Temperature Operation Tj = 200°C • Effective Zero Reverse and Forward Recovery • High Frequency Operation • High Speed Low Loss Switching Key Markets • Space • Defence & Civil Aviation • Down-hole Drilling Applications • Motor Drives • UPS • Induction Heating • SMPS
Silicon Carbide Power 11
Absolute Maximum Ratings (Tc = 25°C unless otherwise stated)
VRRM Repetitive Peak Reverse Breakdown Voltage 1200V
VRSM Surge Peak Reverse Voltage 1200V
VDC DC Blocking Voltage 1200V
IF(AVG) Average Forward Current 20A
IF(PEAK) Peak Forward Surge Current, Tc = 125°C 50A
PD Power Dissipation (per leg) 116W
TJ Junction Temperature Range -55 to +200°C
Tstg Storage Temperature Range -55 to +225°C
Thermal Properties
Symbols Parameters Max. Units
RθJC Thermal Resistance, Junction To Case 1.5 °C/W
Electrical Characteristics (Per Die, Tc = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min. Typ. Max. Units
(1) IF = 10A 1.6 1.8
VF Forward Voltage V
Tc = 175°C 2.5 3.0
VR = VRRM 10 200
IR Reverse Current μA
Tc = 175°C 20 1000
Dynamic Charactersitics
Symbols Parameters Test Conditions Min. Typ. Max. Units
Total Capacitative IF = 10A VR = 1200V
QC 61 nC
Charge di/dt = 500A/μs TJ = 25°C
Mechanical Data Dimensions in mm (Inches)
TO258 (TO-258AA)
PIN 1 Anode
PIN 2 Cathode
PIN 3 Anode
Flexible • Innovative • Trusted12 Silicon Carbide Power
Normally-Off Silicon
Carbide Power JFET
SML100M12MSF
Features
• RDS(on)max of 0.100
• High Temperature Operation Tj = 200°C
• Low Gate Charge and Intrinsic Capacitance
• Positive Temperature Coefficient and Temperature
• Independent Switching Behaviour
Key Markets
• Space
• Defence & Civil Aviation
• Down-hole Drilling
Applications
• Motor Drives
• UPS
• Induction Heating
• SMPS
Courtesy of EFSilicon Carbide Power 13
Absolute Maximum Ratings (Tc = 25°C unless otherwise stated)
VDS Drain-Source Blocking Voltage 1200 V
RDS(on)max Drain-Source On-resistance 0.1W
ID Available Drain Current 24 A
IDM Pulsed Drain Current 34 A
PD Power Dissipation 70 W
VGS DC Gate-Source Voltage -15 to +3 V
TJ Operating Temperature -55 to +200 °C
TJstg Storage Temperature - 55 to +225 °C
Thermal Properties (Per Die)
Symbols Parameters Min. Min. Typ. Max. Units
RθJC Thermal Resistance, Junction To Case, TC = 25°C 1.8 2.5 °C/W
Electrical Characteristics (Per Die, Tc = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Blocking Voltage VGS = 0V, ID = 1.0mA 1200 V
VDS = 1200V, VGS = 0V 1.0
IDS Drain-Source Leakage Current mA
VDS = 1200V, VGS = -5V 0.11
VGS(th) Gate Threshold Voltage VDS = 1.0V, ID = 34mA 0.70 1.00 1.25 V
VGS = 2.4V 0.25 1.0
IGSS Gate-Source Leakage Current mA
VGS = -15V 0.1 1.0
ID = 13A, VGS = 3V, TJ = 25°C 0.09 0.1
RDS(on)(1) Drain-Source On-resistance W
ID = 13A, VGS = 3V, TJ = 175°C 0.29
Qg Total Gate Charge VDS = 600V, ID = 13A, 28
nC
Qgs Gate-Source Charge VGS = 0V to +3V 9.3
ton Turn-on Delay (Resistive Load) 20
VDS = 600V, ID = 13A,
toff Turn-off Delay ns (Resistive Load) 30 ns
CBP = 33nF, RCL = 110W
tr Rise time (Resistive Load) 70
Ciss Input Capacitance 642
Coss Output Capacitance VDS = 100V 69 pF
Crss Reverse Transfer Capacitance 68
Mechanical Data Dimensions in mm (Inches)
TO258 (TO-258AA)
PIN 1 Gate
PIN 2 Source
PIN 3 Drain
Flexible • Innovative • Trusted14 Silicon Carbide Power Silicon Carbide Power High performance, ultimate reliability However tough the environment…
Silicon Carbide Power 15 Flexible • Innovative • Trusted
Flexible • Innovative • Trusted
Specialists in
• Ceramic surface mount products Semelab holds approvals for many aerospace semiconductor
• Hermetic metal packaged devices devices, and can manufacture in accordance with CECC,
• Hermetic power modules mil19500, ESAlevel 5000 and other major process flows.
• Standard and custom products Please let us know your requirements.
• Screening and qualification
• Continued supply of legacy device types and packages
Semelab Limited Coventry Road, Lutterworth, Leicestershire. LE17 4JB, UK
Tel: +44 (0) 1455 556565 Fax: +44 (0) 1455 552612
www.semelab-tt.com Email: sales@semelab-tt.com
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