BEYOND-NANO: a research infrastructure focused on high performance microelectronics
←
→
Page content transcription
If your browser does not render page correctly, please read the page content below
BEYOND–NANO: a research infrastructure
focused on high performance microelectronics
Corrado Spinella
Director of the Department of Physical Sciences and Technologies of Matter (DSFTM)
corrado.spinella@cnr.it
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30th
Lab_Mat Lab_Power Lab_PV
Investigation of materials for Nanotechnological processes for Innovative processes for advanced
microelectronics applications power electronics photovoltaics
40 Millions of Euros
Regione Siciliana: 20 M€
Miur: 15 M€
Cnr: 5 M€
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30th
The approach
From fundamental science to device prototyping
Fundamental science on Nanofabrication processes Materials and process
materials properties integration in complex devices
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30th
The Moore Law Improving resolution of microscoy techniques
1000000 0.1
price per million
transistors
Aberration–
10000 corrected EM
100 1
price $
price per million
instructions per
1 second 35% per
year
reduction 10 Electron
0.01
Microscope (EM)
resolution (Å)
0.0001
10000 100
1960 1970 1980 1990 2000 2010 2020
Year
1000
channel length (nm)
1000
gate
source drain
100
channel 104
10 Light Microscope
1 105
1960 1970 1980 1990 2000 2010 2020 1800 1840 1880 1920 1960 2000 2040
Year Year
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30th
Atomic resolution Scanning Transmission Electron Microscopy
Beam STEM
Energy resolution
(KeV) (Å)
200 0.68
100 0.83
60 1.1
40 1.36
Ti
Sr
(110) Si
Conventional TEM Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30th
Sub–Ångstrom spatial resolution
100
1 Cq3
2 s
10
d (Å)
q
with a
spherical 1
spherical
aberration 0,001 0,01 0,1 1
1
0.61 l
d ≈ Cs q 3
aberration
2
corrector
Rayleigh limit q
l 0.1
d ≈ 0.61 0.01 0.1 1
q
q (rad)
Inherent nature of bending of Inherent nature of the lens
light/electron waves when used in the imaging system
passes through an aperture
lens of finite size
l = 0.025 Å @ 200 kV
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30th
HEXAGONAL HEXAGONAL
ROCK–SALT
LOW–ORDER HIGH–ORDER
T = 150 °C on SiO2 T = 350 °C on SiO2 Epitaxial–Hexagonal
gaps
9
11
Van der Waals forces
9
11
11
11
9
11
11
9
A.M. Mio et al., Nanotechnology 28(6), 065706 (2017)
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30th
More Moore: memory devices based on novel materials
reset
Phase Change Memories based on chalcogenides
applied pulse
set
0.0 1.0
read read
0.2 0.8
0.4 0.6 regime of fast
temperature
Tm
crystallization
0.6 0.4
0.8 0.2
amorphization
1.0 0.0
conductivity
0.0 0.2 0.4 0.6 0.8 1.0 “1”
Ge at % crystallization “0”
threshold switching
top electrode
time
crystalline GST
Write/Erase velocity
thermal insulator
α/crystalline Scalability
GST
resistor (heater)
High RESET/SET Contrast
Ciclability/Endurance
bottom electrode
20 nm Data Retention
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30th
Nanoscale tailoring of Schottky metal/MoS2 barrier by oxygen plasma
functionalization
MoS2 promising material for next generation post–Si
CMOS technology
The high effective mass and large bandgap of MoS2 minimize
direct source–drain tunneling, while its atomically thin body
maximizes the gate modulation efficiency in ultrashort–
channel transistors.
0.4 0.4
O2 plasma for
pristine MoS2
0.2 0.2 10 minutes
current (μA)
current (μA)
0.0 0.0
–0.2 –0.2
–0.4 –0.4
–4 –2 0 2 4 –4 –2 0 2 4
Vtip (V) Vtip (V)
F. Giannazzo et al., ACS Applied Materials 9, 23164 (2017)
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30th
After O2 plasma exposure
magnetic prism
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30thAmbipolar MoS2 Transistor a
O2 plasma O2 plasma
functionalization functionalization
1.0 10–5
VG = 0 to 28 V 10–6
I/W (A/mm)
L = 10 mm 10–7
0.5 10–8 VDS (V)
10–9 1
I/W (A/mm)
10–10 2
0 5
10–11
1.0
VG = –60 to 0 V
me = 11.5 cm2 V–1 s–1
1.0
I/W (A/mm)
0.5 mh = 7.2 cm2 V–1 s–1
0.5
0 0
0 1 2 3 4 5 –60 –40 –20 0 20
VG (V)
VDS (V)
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30thGlobal energy consumption
900
800
history predictions
700
quadrillion Btu
600
500
400
300
200
100
0
1980 1990 2000 2010 2020 2030 2040
Source: IEA, World Energy Outlook report for 2016
Reducing the CO2 emissions
Electric power distribution chain
CO2 emissions (Gt)
2020 2035
40 current trend
Efficiency 71% 48%
35 Renewables 18% 21%
Biofuels 1% 3%
Nuclear 7% 8%
30
CCS * 2% 19%
25
20 *Carbon capture
2008 2020 2035 and storage
Source: IEA, World Energy Outlook report for 2010
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30thWide band–gap semiconductors Vbd2
Ron ≈
e mn Ecr3
103
specific on–resistance (Ω cm2)
Si 4H–SiC GaN
102
Egap (eV) 1.1 3.2 3.4 101
Ecr (MV/cm) 0.3 3.0 3.3 s 100 Si
10–1
mn (cm2/Vs) 1350 800 1300*
10–2 4H–SiC
k (W/m°C) 150 490 130 10–3
*2DEG 10–4 GaN
Power MOSFET
10–5
10–6 2
RS 10 103 104
breakdown voltage (V)
n+ +
p+ Ra Rch n p+
RJFET Lower Ron reduced device size
Rn n– • Reduction of the static and dynamic losses
• High power conversion efficiency
n+
RD
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30thGrowht of
3C–SiC on 3C–SiC
Si
Si 3C–SiC
Si
6H cluster
0.1 mm
10 Å 10 Å
10 Å 10 Å 10 Å 10 Å
La Via et al., Mat. Sci. Semicon. Processing 78, 57 (2018) Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30th4H–SiC Power MOSFET
Issues:
High density of traps at SiO2/SiC interface, low channel
mobility
1150 °C in N2O
SiO2
n+ n+
p+ p+
n– 4H–SiC
n+
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30thSTEM–EELS reveals the presence of a
non–abrupt SiO2/4H–SiC interface
A mixed sp2/sp3 carbon hybridization
in the non–abrupt interface suggests
that the interfacial carbon atoms have
lost their tetrahedral SiC coordination
120
dark field
110
silicon
2400 100
2200
oxygen
90
2000
SiOx nitrogen
counts (arb. units)
s*
counts (arb. units)
80
1800
70 carbon
1600
60
1400
50
SiO2
1200
1000 p* 40
800 30
600 20
285 290 295 300
10
Energy (eV)
0
–20 –10 0 10 20
distance (Å)
P. Fiorenza et al., Nanotech. 29, Art. No. 395702 (2018) Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30thTechnology transfer: the silicon carbide example
Energy efficiency – power electronics – silicon carbide
Data center
conversion smart grid IT intelligent building
loss loss
wind loss railway EV/HEV motor drive
transmission
conversion conversion
Thermal distribution conversion conversion conversion
Nuclear generation
Hydro switching
N Innovative Power storage
large scale
power supply
Electronics based on business machine
server
5Å SiC Photovoltaics silicon carbide UPS
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30tha selection of Patents
Manufacture of wafers of wide energy gap semiconductor material for
the integration of electronic and/or optical and/or optoelectronic
devices, US 20140264385 A1, 2014, September the 18th
Semiconductor substrate suitable for the realization of electronic and/or
optoelectronic devices and relative manufacturing process, US 20150031193 A1,
2015, January the 29th
Solar panel having monolithic multicell photovoltaic modules of
different types, US 9006558 B2, 2015, April the 14th
Integrated electronic device for detecting ultraviolet radiation, US
20160349108 A1, 2016, December the 1st
Thin film solar cell module including series-connected cells formed on a flexible
substrate by using lithography, US 9276149 B2, 2016, March the 1st
Thin refractory metal layer used as contact barrier to improve the performance of
thin-film solar cells, US 20160079453 A1, 2017, March the 17th
Avalanche photodiode for detecting ultraviolet radiation and
manufacturing method thereof, US 20170098730 A1, April the 6th
Wide bandgap high-density semiconductor switching device and manufacturing
process thereof, US 9711599 B2, 2017, July the 18th
Multiband double junction photodiode and
related manufacturing process, US 20170207360 Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30th
A1, 2017, July the 20thGraphene growth on _ [0001]
_
mis–oriented Si–face [1100]
[1120]
graphene
of the SiC wafer
interface
4H–SiC
Epitaxial graphene: solution for
Si terminated 4H–SiC (0001)
_ substrates 8° off–axis integration of high power and high
miscut angle in the [1120] direction frequency functions on a SiC substrate
(c) 30
30
(nm)
Height (nm)
Height (nm)
100
Height
f
[1-100]
0
400 400 500 400 500 400 500 400 500
L (nm)
[11-20]
00 G. Nicotra et al., Phys. Rev. B 91(15), 155411 (2015)
200 nm
200 nm
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30th(0001) q
Atomic resolution HAADF–STEM
@ 60 keV primary electron beam
_
SiC
5th
4th
3rd
2nd
1st
Cross section perpendicular to
[0001] direction
3.35 Å The buffer layer on the planar
2.64 Å (0001) _surface gets detached from
the (112n) surface
Ab initio simulations showing the equilibrium average atomic distances
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30thπ* σ*
Intensity (a.u.)
_
1st step layer (112n)
2nd layer (0001)
buffer layer (0001)
5Å
28 29 30 31 32 33 34 35 36 37
0 0 0 0 Energy
0 Loss0 (eV) 0 0 0 0
_
The buffer layer present on the planar (0001) face gets detached from the substrate on the (112n)
facets of the steps, turning into a quasi–freestanding graphene film
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30thConductive Atomic Force Microscopy
30
1
20
15
Height (nm)
10
Current (mA)
Height (nm)
5
0
1.0
Current (mA)
0.8
0.6
0.4
0
0
100 nm 100 nm 100 200 300
Length (nm)
When synthesized on a silicon carbide (0001) surface, epitaxial
graphene is subjected to a high electron–doping originating right
from the interface carbon buffer layer that is covalently bonded
to the substrate.
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30thDistributed European Research infrastructure of advanced electron microscopy
ESTEEM3 NTNU
Oxford Univ.
Cambridge Univ.
FZ–Jüelich Krakowie Univ.
Antwerp Univ.
Paris Sud Univ.
Max Planck
FELMI–ZFE
JSI–K7
CEMES
Zaragoza Univ.
Cadiz Univ.
Beyond–Nano
Accademia Nazionale dei Lincei, Fondazione Edison, 2019, October 30thYou can also read
